PART |
Description |
Maker |
HYS72V32220GU-75-C2 HYS64V32220GU-75-C2 HYS72V1630 |
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules 3.36米x 64/72-Bit 1银行128MByte SDRAM的模.32M的x 64/72-Bit 2银行256MB的内存模68引脚无缓冲DIMM模块
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Infineon Technologies AG
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HM5257165B HM5257165BTD-A6 HM5257165B-A6 HM5257165 |
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword × 16-bit × 4-bank/16-Mword × 8-bit × 4-bank /32-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:30; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:18-30 16 M EDO DRAM(2-Mword*8-bit) 2K Refresh Circular Connector; No. of Contacts:32; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:18; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:18-32 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133/ PC/100 SDRAM CABLE ASSEMBLY 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133, PC/100 SDRAM
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Elpida Memory, Inc.
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MSM56V16160D MSM56V16160DH |
2-Bank 512K×16 Synchronous Dynamic RAM(212K×16动态RAM) 2-Bank x 524288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
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OKI electronic componets OKI SEMICONDUCTOR CO., LTD.
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HM5259405B-A6 HM5259165B-75 HM5259405B-75 HM525980 |
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133, PC/100 SDRAM
|
Elpida Memory
|
HYS72D32500GR-8-A HYS72D64500GR-8-A HYS72D64500GR- |
256MB (32Mx72) PC1600 1-bank 512MB (64Mx72) PC1600 1-bank 512MB (64Mx72) PC2100 1-bank 1GB (128Mx72) PC1600 2-bank 1GB (128Mx72) PC2100 2-bank GB的(128Mx72)PC2100 2银行 32M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
|
Infineon Technologies AG
|
HM5259165B HM5259165B-75 HM5259165B-A6 HM5259165BT |
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 】 16-bit 】 4-bank/16-Mword 】 8-bit 】 4-bank /32-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133, PC/100 SDRAM
|
ELPIDA[Elpida Memory]
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K5T6432YT K5T6432YTM-T310 |
64Mbit (4Mx16) four bank NOR flash memory / 32Mbit (2Mx16) UtRAM, 100ns Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM
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Samsung Electronic SAMSUNG[Samsung semiconductor]
|
IDT72T4088 IDT72T4088L10BB IDT72T4088L10BBI IDT72T |
2.5 VOLT HIGH-SPEED TeraSync DDR/SDR FIFO 40-BIT CONFIGURATION 2.5 VOLT HIGH-SPEED TeraSync?? DDR/SDR FIFO 40-BIT CONFIGURATION
|
IDT[Integrated Device Technology]
|
M2V64S20BTP-6 M2V64S20TP M2V64S30BTP-6 M2V64S30TP |
From old datasheet system 4-BANK x 2097152-WORD x 8-BIT 64M bit Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
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UPD4564323G5-A10-9JH UPD4564323G5-A60-9JH UPD45643 |
64M-bit Synchronous DRAM 4-bank/ LVTTL 64M-bit Synchronous DRAM 4-bank, LVTTL 6400位同步DRAM 4银行,LVTTL
|
NEC Corp. NEC, Corp.
|
MB81ES123245-10 |
128 M-BIT (4-BANK × 1 M-WORD × 32-BIT) SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP
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Fujitsu Component Limited.
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